Facilities and Equipment

Dual Mask Aligner (양면 정렬 마이크로패턴 노광장비

  • Manufacturer SUSS MicroTec Lithography GmbH
  • Manufacture date 2016
  • Model MASK ALIGNER MA6
  • Location IBS head quarter, C171 Photo-lithography room
  • Manager None

PURPOSE

This equipment is used to development for low temperature detectors. It is a semi-automated mask aligner for both side alignment for wafers.

SPECIFICATION AND PERFORMANCE

It should guarantee the alignment accuracy of 0.5 um for top-side and 1 um for bottom-side. Flexible beam shaping adjustment has be available by using different illumination filter plates.

  • Wafer/Substrate Size : Silicon wafer and transparent substrate of 3" and above
  • Mask size : 5" × 5", 6" × 6"
  • Exposure optics
    • UV light source 350 ~ 450 ㎚, UV-Lamp power ≥350 W
    • Light uniformity: ≤2.0%
  • Exposure System
    • For steep wall slopes, high resolution, high aspect ratio structure, thick PR
    • Exposure gap : 1~999 ㎛ / 1 um steps
  • Printing Resolution
    • Vacuum contact : 0.7 ㎛
    • Hard / Soft contact : 1.0 /2.0 ㎛
    • Proximity (20 ㎛) : 2.5 ~ 3.0 ㎛
  • Alignment
    • Methods : Top Side Alignment (TSA) microscope
    • Bottom Side Alignment (BSA) microscope
    • Accuracy: TSA ± 0.5 ㎛ / BSA ± 1.0 ㎛
    • Alignment gap : 1 ~ 999 ㎛ / 1 um steps
  • Alignment stage
    • Alignment range in X : ≥ ±10 ㎜
    • Alignment range in Y : ≥ ±5 ㎜
    • Alignment range in θ : ≥ ±5°
    • Mechanical resolution in X, Y : 0.1 ㎛
  • Microscope illumination
  • Microscope stage(TSA/BSA)
    • Top side alignment
      • Movement range in X : ± 40 ㎜
      • Movement range in Y : +30 ㎜ / -50 ㎜
      • Rotation range : ≥±4°
    • Bottom side alignment
    • Movement range in X : 15 mm to 100 mm
    • Movement range in Y : +50 mm / -20 mm
  • Topside microscope (split-field)
    • Eyepieces : two 10X
    • Objectives : two 5X, two 10X with turret
  • Programming
    • Exposure modes : Proximity, Soft contact, Hard contact, Vacuum contact , Soft vacuum contact
    • Exposure time : 0 ~ 999.9 sec, 0.1 sec steps
    • Resist type : Positive, Negative
    • Alignment side : Top side alignment
  • Lamp power supply unit
    • Constant intensity mode for 365 ㎚, 405 ㎚ : To compensate intensity lost due to lamp aging
    • Constant power Mode
    • Digital read out of light intensity and power
  • Lamp adapter
  • Light intensity meter
    • For measurement, check and calibration of light uniformity in the exposure area
    • Dose measurement functionality
    • Measurement for 365 nm and broadband(i-, g-, h-line)
  • Internal UV light sensors
    • For lamp power supply
    • For light intensity meter (365 nm/405 nm)
  • Wedge Error Compensation System
    • Leveling of substrate to mask
  • UV Lamp ( ≥350 W)
  • Vacuum Pump
  • Vibration isolation damping system
  • Expandable design for following features
    • Nano Imprinting Lithography
    • Buried layers feature alignment using Infrared light kits
    • Mask Protection Technology(MPT) to reduce the frequency of mask cleaning