Facilities and Equipment

Low temperature PECVD (저온플라즈마 화학기상증착장비)

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  • Manufacturer Samco Inc.
  • Manufacture date 2018
  • Model PD-100ST
  • Location IBS head quarter, C169 clean room 1000 (deposition room)
  • Manager None

PURPOSE

This equipment is used to measurement for low temperature detectors. It utilize a liquid TEOS source o deposit SiO2 films at hogh speed using a low temperature process. Furthermore, the proprietary self-bias deposition of thin and thick films with low internal stress.

SPECIFICATION AND PERFORMANCE

  • Main Chamber
    • STS304
    • cylindrical Φ = 260.6 mm
    • Maximum 4 inch wafer
    • view port for visual confirmation of plasma
    • chamber lid opens and closes manually
  • Electrodes
    • parallel plate (capacitive coupling)
    • fixed gap between electrodes: 29 mm
  • Resistive heater : Max. 300 ℃
  • PID controlled resistive heater : Max. 350 ℃
  • PID controlled RF Generator
    • 13.56 MHz
    • Max. 300 W
    • crystal oscillation
    • all solid state
  • Matching Unit
    • automatic matching
  • Liquid Source Line
    • the flow rate of the vaporized liquid source is directly controlled
    • source tank
    • source tank heating (75-85 ℃)
    • gas flow control
    • gas inlet valve :: bellows seal valve (air operated)
    • protection to over heat problems
  • Process Gas Lines
  • Vacuum Gauge
  • Process Vacuum Line
    • Dry pump (2000 liter/min at 50/60 Hz)
  • Pressure Control
    • automatic pressure control (variable evacuation conductance)
  • System Control
    • automatic operation via programmable logic controller